Recent Progress in Scaling InP HEMT TMIC Technology to 850 GHz

被引：54

作者：

Deal, W. R. ^{[1
]}

Leong, K. ^{[1
]}

Zamora, A. ^{[1
]}

Radisic, V. ^{[1
]}

Mei, X. B. ^{[1
]}

机构：

[1] Northrop Grumman Corp, New York, NY 10006 USA

来源：

2014 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2014年

关键词：

Terahertz; low noise amplifiers; power amplifiers;

D O I：

10.1109/MWSYM.2014.6848588

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, recent work on pushing InP HEMT amplifier technology to 850 GHz is reported. In particular, we have demonstrated on-wafer gain at this frequency. To our knowledge, this is the first time gain has been reported at this frequency. This achievement is possible by transistor scaling, frontside and backside feature scaling and detailed transistor modeling and design

引用

页数：3

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