Built-in Electric Field and Radiative Efficiency of Polar (0001) and Semipolar (11-22) Al0.5Ga0.5N/GaN Quantum Dots

被引：2

作者：

Brault, J. ^{[1
,2
]}

Kahouli, A. ^{[1
,2
]}

Leroux, M. ^{[1
,2
]}

Damilano, B. ^{[1
,2
]}

Elmaghraoui, D. ^{[1
,2
]}

Vennegues, P. ^{[1
,2
]}

Guillet, T. ^{[1
,2
]}

Brimont, C. ^{[1
,2
]}

机构：

[1] CNRS, Ctr Rech Heteroepitaxie & Ses Applicat, Rue B Gregory, F-06560 Valbonne, France

[2] Fac Sci Tunis, Phys Mat Condensee Lab, Tunis F-2092, Tunisia

来源：

PHYSICS OF SEMICONDUCTORS | 2013年 / 1566卷

关键词：

III-Nitrides; Quantum dots; Stark effect;

D O I：

10.1063/1.4848291

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We compare the optical properties of ensembles of polar (0001) and semipolar (11- 22) Al0.5Ga0.5N/GaN quantum dots grown by molecular beam epitaxy The polar quantum dot emission shows a huge Stark shift. Using dot height distributions measured by transmission electron microscopy, a simple model allows accounting for the PL energies and lineshapes, and to the screening of the Stark field. The semipolar quantum dots emission show a much weaker Stark effect. High room temperature quantum yields attest the efficiency of 3D-confinement.

引用

页码：73 / +

页数：2

共 7 条

[1] Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures [J].