New photovoltaic gamma and X-Ray detector

被引：0

作者：

Ayzenshtat, GI ^{[1
]}

Vilisova, MD

Drugova, EP

Mokeev, DY

Porokhovnichenko, LP

Chubirko, VA

机构：

[1] JSC Sci Res Inst Semicond Devises, Tomsk 634034, Russia

[2] Siberian Physico Tech Inst, Tomsk 634050, Russia

来源：

SIBCON-2005: IEEE International Siberian Conference on Control and Communications | 2005年

关键词：

WE GaAs; photovoltaic; X-Ray; radiation detector;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Detectors based on epitaxial gallium arsenide grown from the gas phase are investigated. Two types of structures are studied: I with a not doped active layer (n <= 10(13) cm(-3)), 2 - with the active layer compensated by chromium. It is shown that both types of structures operates in photovaultarical mode that allows to remove the drain current. Structures may be used as detectors of gamma radiation. Detectors have 100% efficiency of charge collection.

引用

页码：94 / 97

页数：4

共 3 条

[1]

AKHMADULIN RA, 2002, LETT JTF, V26, P34

[2] Modeling of processes of charge separation in a GaAs detector [J].

Ayzenshtat, AI ;

Tolbanov, OP ;

Vorobiev, AP .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2002, 494 (1-3) :199-204

[3] Room-temperature compound semiconductor radiation detectors [J].

McGregor, DS ;

Hermon, H .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1997, 395 (01) :101-124

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