Evolution of Fast 4H-SiC CVD Growth and Defect Reduction Techniques

被引：3

作者：

Tsuchida, H. ^{[1
]}

Kamata, I. ^{[1
]}

Ito, M. ^{[1
]}

Miyazawa, T. ^{[1
]}

Hoshino, N. ^{[1
]}

Fujibayashi, H. ^{[1
,2
]}

Ito, H. ^{[1
,3
]}

Naitou, M. ^{[2
]}

Aoki, H. ^{[4
]}

Nishikawa, K. ^{[5
]}

Makinoz, E. ^{[2
]}

Tokuda, Y. ^{[2
,6
]}

Kojima, J. ^{[2
,6
]}

机构：

[1] Cent Res Inst Elect Power Ind CRIEPI, 2-6-1 Nagasaka, Yokosuka, Kanagawa 2400196, Japan

[2] DENSO Corp, Nisshin, Aichi, Japan

[3] NuFlare Technol Inc, Shizuoka 4108510, Japan

[4] Toyota Motor Co Ltd, Toyoake, Aichi 4718571, Japan

[5] Toyota Cent Res & Dev Labs Inc, Nagakute, Aichi 4801192, Japan

[6] R&D Partnership Future Power Elect Technol, Tokyo, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷

基金：

日本学术振兴会;

关键词：

CVD; epitaxial growth; bulk growth; extended defect; dislocation; stacking fault; EPITAXIAL-GROWTH; DISLOCATION; SIMULATION; REACTOR;

D O I：

10.4028/www.scientific.net/MSF.778-780.85

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This paper introduces our recent challenges in fast 4H-SiC epitaxial growth, high-speed crystal growth by a high-temperature gas source method and defect reduction. Enhanced growth rates in 4H-SiC epitaxial growth by high-speed wafer rotation and in a high-temperature gas source method by increasing the gas flow velocity are demonstrated. Trials and results of deflecting threading dislocations by patterned C-face 4H-SiC epitaxial growth are also shown.

引用

页码：85 / +

页数：2

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