Thermal SPICE Modeling of FinFET and BEOL Considering Frequency-Dependent Transient Response, 3-D Heat Flow, Boundary/Alloy Scattering, and Interfacial Thermal Resistance

被引：22

作者：

Chung, Chia-Che ^{[1
]}

Lin, H. H. ^{[2
]}

Wan, W. K. ^{[2
]}

Yang, M. -T. ^{[2
]}

Liu, C. W. ^{[3
,4
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 106, Taiwan

[2] MediaTek Inc, Hsinchu 300, Taiwan

[3] Natl Taiwan Univ, Dept Elect Engn, Grad Inst Elect Engn, Grad Inst Photon & Optoelect, Taipei 106, Taiwan

[4] Taiwan Res Semicond Inst, Hsinchu 300, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2019年 / 66卷 / 06期

关键词：

Back-end-of-line; FinFET; interfacial thermal resistance; self-heating effect; SPICE thermal model;

D O I：

10.1109/TED.2019.2912426

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High device density and high power density intensify the self-heating effect in scaled FinFET circuits to degrade both device and back-end-of-line (BEOL) reliability. The boundary scattering in nanostructure, alloy scattering in SiGe, and interfacial thermal resistance (ITR) between different materials even worsen the self-heating. A modularized FinFET SPICE model consisting of distributed R-th-C-th network is used to provide a transient thermal response. A two-step pseudo isothermal plane model is proposed to characterize the thermal behavior of BEOL. Both BEOL and FinFET SPICE model are verified by TCAD simulation with dc and ac inputs. The ITR significantly raises the junction temperature of the FinFETs (Delta T-j similar to 42 degrees C).

引用

页码：2710 / 2714

页数：5

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