Stable highly conductive ZnO via reduction of Zn vacancies

被引：60

作者：

Look, D. C. ^{[1
,2
,3
]}

Droubay, T. C. ^{[4
]}

Chambers, S. A. ^{[4
]}

机构：

[1] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA

[2] Wyle Labs Inc, Dayton, OH 45431 USA

[3] USAF, Res Lab, Sensors Directorate, Wright Patterson AFB, OH 45433 USA

[4] Pacific NW Natl Lab, Richland, WA 99352 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 10期

基金：

美国国家科学基金会;

关键词：

PULSED-LASER DEPOSITION; AL-DOPED ZNO; OXIDE;

D O I：

10.1063/1.4748869

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Growth of Ga-doped ZnO by pulsed laser deposition at 200 degrees C in an ambient of Ar and H-2 produces a resistivity of 1.5 x 10(-4) Omega-cm, stable to 500 degrees C. The resistivity can be further reduced to 1.2 x 10(-4) Omega-cm by annealing on Zn foil, which reduces the compensating Zn-vacancy acceptor concentration N-A to 5 x 10(19) cm(-3), only 3% of the Ga-donor concentration N-D of 1.6 x 10(21) cm(-3), with ND and NA determined from a degenerate mobility theory. The plasmon-resonance wavelength is only 1060 nm, further bridging the gap between metals and semiconductors. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4748869]

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页数：3

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