Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures

被引：48

作者：

Hofmann, T. ^{[1
,2
]}

Kuehne, P. ^{[1
,2
]}

Schoeche, S. ^{[1
,2
]}

Chen, Jr-Tai ^{[3
]}

Forsberg, U. ^{[3
]}

Janzen, E. ^{[3
]}

Ben Sedrine, N. ^{[3
,4
]}

Herzinger, C. M. ^{[5
]}

Woollam, J. A. ^{[5
]}

Schubert, M. ^{[1
,2
]}

Darakchieva, V. ^{[3
]}

机构：

[1] Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA

[2] Univ Nebraska, Ctr Nanohybrid Funct Mat, Lincoln, NE 68588 USA

[3] Linkoping Univ, Dept Phys Chem & Biol, IFM, Linkoping, Sweden

[4] Univ Tecn Lisboa, IST ITN Inst Super Tecn, P-2686953 Sacavem, Portugal

[5] JA Woollam Co Inc, Lincoln, NE 68508 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 19期

基金：

瑞典研究理事会; 美国国家科学基金会;

关键词：

FREE-CARRIER; ELLIPSOMETRY; PARAMETERS; GROWTH;

D O I：

10.1063/1.4765351

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature-dependence of free-charge carrier mobility, sheet density, and effective mass of a two-dimensional electron gas in a AlGaN/GaN heterostructure deposited on SiC substrate is determined using the THz optical Hall effect in the spectral range from 0.22 to 0.32 THz for temperatures from 1.5 to 300 K. The THz optical Hall-effect measurements are combined with room temperature mid-infrared spectroscopic ellipsometry measurements to determine the layer thickness, phonon mode, and free-charge carrier parameters of the heterostructure constituents. An increase of the electron effective mass from (0.22 +/- 0.01)m(0) at 1.5 K to (0.36 +/- 0.03)m(0) at 300 K is observed, which is indicative for a reduction in spatial confinement of the two-dimensional electron gas at room temperature. The temperature-dependence of the mobility and the sheet density is in good agreement with electrical measurements reported in the literature. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4765351]

引用

页数：4

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