Interlamellar spacing in Al-Si eutectic growth controlled by temperature gradient

被引:0
|
作者
Wolczynski, W
Billia, B
Rabczak, K
机构
[1] UNIV AIX MARSEILLE 3,FAC SCI ST JEROME,CNRS,LAB MAT ORG & PROPRIETES,F-13397 MARSEILLE,FRANCE
[2] FOUNDRY RES INST,PL-30418 KRAKOW,POLAND
来源
SOLIDIFICATION AND GRAVITY | 1996年 / 215卷
关键词
irregular growth; lamellar eutectic; structure selection; growth law; temperature gradient; interface perturbation; marginal wavelength; minimum entropy production;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
According to irregular eutectic growth model two characteristic parameters are differentiated within revealed morphology: the first (lambda(i)) - adequate to the formation of lamellar structure in steady-state and the second (lambda(s)(i)) - to extreme development of the perturbation due to marginal wavelength at non-faceted s/l interface. The selection of both above parameters among all the spacings revealed on cross-sections of the Al-Si eutectic alloy solidified directionally is also made. Some values of the lambda(i) and lambda(s)(i) parameters obtained by means of calculation made using the new growth law for the same values of growth rate v and temperature gradient G as those imposed during solidification of the Al-Si eutectic alloy are compared to the spacings selected within oriented morphology. An influence of temperature gradient G(G(x), G(z)) on lamellar structure formation during irregular eutectic growth is emphasized. The analysis is based on existence of two thermodynamic states: stationary state leading to formation of regular structure and rotation around stationary state leading to branching phenomenon due to instability at the s/l interface of non-faceted phase.
引用
收藏
页码:323 / 330
页数:8
相关论文
共 8 条
  • [1] Influence of control and material parameters on regular eutectic growth and interlamellar spacing selection
    Wolczynski, W
    Billia, B
    SOLIDIFICATION AND GRAVITY, 1996, 215 : 313 - 322
  • [2] Effects of Strontium,Magnesium Addition,Temperature Gradient,and Growth Velocity on Al-Si Eutectic Growth in a Unidirectionally-solidified Al-13 wt%,Si Alloy
    Hengcheng Liao
    Wanru Huang
    Qigui Wang
    Fang Jia
    JournalofMaterialsScience&Technology, 2014, 30 (02) : 146 - 153
  • [3] Effects of Strontium, Magnesium Addition, Temperature Gradient, and Growth Velocity on Al-Si Eutectic Growth in a Unidirectionally- solidified Al-13 wt% Si Alloy
    Liao, Hengcheng
    Huang, Wanru
    Wang, Qigui
    Jia, Fang
    JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2014, 30 (02) : 146 - 153
  • [4] Analysis of the high growth-rate transition in Al-Si eutectic solidification
    Hosch, T.
    England, L. G.
    Napolitano, R. E.
    JOURNAL OF MATERIALS SCIENCE, 2009, 44 (18) : 4892 - 4899
  • [5] Eutectic growth in Sr modified Al-13%Si alloy under unidirectional solidification
    Liao, H. C.
    Huang, W. R.
    Cai, M. D.
    INTERNATIONAL JOURNAL OF CAST METALS RESEARCH, 2011, 24 (02) : 102 - 107
  • [6] Temperature gradient controlled growth and optical properties of Er:BaY2F8 crystals
    Ruan Yongfeng
    Zhang Shouchao
    Li Guanghui
    Zhu Wei
    Wang Danli
    Zhang Lingcui
    CRYSTAL RESEARCH AND TECHNOLOGY, 2010, 45 (05) : 562 - 566
  • [7] The investigation of the growth and perfection of the poly(ethylene terephthalate) crystalline region from amorphous state during annealing using a controlled temperature gradient
    Xu, Duigong
    Wang, Hai
    Bin, Yuezhen
    POLYMER CRYSTALLIZATION, 2021, 4 (03)
  • [8] Temperature gradient controlled crystal growth from TIPS pentacene-poly(α-methyl styrene) blends for improving performance of organic thin film transistors
    Asare-Yeboah, Kyeiwaa
    Bi, Sheng
    He, Zhengran
    Li, Dawen
    ORGANIC ELECTRONICS, 2016, 32 : 195 - 199