Application of high pressure-DTA for high pressure-liquid phase epitaxy of doped mercury and thallium HTS formations

被引：0
作者：
Lada, T
Przybylski, K
Morawski, A
Prazuch, J
Brylewski, T
机构：
[1] Polish Acad Sci, High Pressure Res Ctr, PL-01142 Warsaw, Poland
[2] Stanislaw Staszic Univ Min & Met, Fac Mat Sci & Ceram, Dept Solid State Chem, PL-30059 Krakow, Poland
来源：
JOURNAL OF THERMAL ANALYSIS AND CALORIMETRY | 2001年 / 66卷 / 02期
关键词：
HBCCO; high pressure high temperature DTA; liquid phase epitaxy; mercury-based HTS; TBCCO; thallium-based HTS;
D O I：
10.1023/A:1013141707079
中图分类号：
O414.1 [热力学];
学科分类号：
摘要：
The fabrication method of superconducting thin films of compositions HgBa2Ca2Cu3O8+delta (Hg-1223) and Tl2Ba2CuOy (2201) on single-crystalline SrTiO3 and LaAlO3 substrates is reported. The highest obtained T-c was 134 K and J(c) over 10(6) A cm(-2) at 77 K. High pressure DTA (HP-DTA) was applied to grow mercury- and thallium-based high-temperature superconducting crystals and thin films, to identify melting points of particular phases within these oxide systems and determine suitable processing conditions. The DTA system operates at the: maximum temperature of 1200 degreesC, volume up to 5 cm(3), working pressure up to 1.5 GPa and at a working atmosphere - inert gas with up to 25% oxygen.
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收藏
页码：611 / 615
页数：5
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