Deep-level characterization of N-doped ZnO films prepared by reactive magnetron sputtering

被引：39

作者：

Nakano, Y ^{[1
]}

Morikawa, T ^{[1
]}

Ohwaki, T ^{[1
]}

Taga, Y ^{[1
]}

机构：

[1] Toyota Cent Res & Dev Labs Inc, Nagakute, Aichi 4801192, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 23期

关键词：

D O I：

10.1063/1.2139852

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on band gap states in N-doped ZnO (ZnO:N) films that were deposited on indium tin oxide/quartz substrates by reactive magnetron sputtering. Colored ZnO:N samples showed enhanced polycrystalline with increasing N-doping concentration, as determined by x-ray diffraction patterns. Deep-level optical spectroscopy measurements revealed three characteristic deep levels located at similar to 0.98, similar to 1.20, and similar to 2.21 eV below the conduction band. In particular, the pronounced 2.21 eV band is newly introduced by the N doping and behaves as part of the valence band, resulting in band gap narrowing of ZnO. Therefore, this deep level is probably one origin of visible-light sensitivity in ZnO:N. (c) 2005 Americian Institute of Physics.

引用

页码：1 / 3

页数：3

共 28 条

[21] DC VOLTAGE DEPENDENCE OF SEMICONDUCTOR GRAIN-BOUNDARY RESISTANCE [J].

PIKE, GE ;

SEAGER, CH .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3414-3422

[22] Electrical activity of nitrogen acceptors in ZnO films grown by metalorganic vapor phase epitaxy [J].

Rommeluère, JF ;

Svob, L ;

Jomard, F ;

Mimila-Arroyo, J ;

Lusson, A ;

Sallet, V ;

Marfaing, Y .

APPLIED PHYSICS LETTERS, 2003, 83 (02) :287-289

[23] PHOTOCHEMICAL SYNTHESIS OF HYDROGEN PEROXIDE AT ZINC OXIDE SURFACES [J].

RUBIN, TR ;

CALVERT, JG ;

RANKIN, GT ;

MACNEVIN, W .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1953, 75 (12) :2850-2853

[24] PHOTOCATALYZED TRANSFORMATION OF CHLOROAROMATIC DERIVATIVES ON ZINC-OXIDE .2. DICHLOROBENZENES [J].

SEHILI, T ;

BOULE, P ;

LEMAIRE, J .

JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY, 1989, 50 (01) :103-116

[25] Grain-boundary-controlled transport in GaN layers [J].

Shalish, I ;

Kronik, L ;

Segal, G ;

Shapira, Y ;

Zamir, S ;

Meyler, B ;

Salzman, J .

PHYSICAL REVIEW B, 2000, 61 (23) :15573-15576

[26] Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO [J].

Tsukazaki, A ;

Ohtomo, A ;

Onuma, T ;

Ohtani, M ;

Makino, T ;

Sumiya, M ;

Ohtani, K ;

Chichibu, SF ;

Fuke, S ;

Segawa, Y ;

Ohno, H ;

Koinuma, H ;

Kawasaki, M .

NATURE MATERIALS, 2005, 4 (01) :42-46

[27]

Valentin C.D., 2004, PHYS REV B, V70

[28] Deep level defects in n-type GaN compensated with Mg [J].

Yi, GC ;

Wessels, BW .

APPLIED PHYSICS LETTERS, 1996, 68 (26) :3769-3771

← 1 2 3 →