High-Q gold and silicon nitride bilayer nanostrings

被引:10
作者
Biswas, T. S. [1 ]
Suhel, A. [1 ]
Hauer, B. D. [1 ]
Palomino, A. [1 ]
Beach, K. S. D. [1 ]
Davis, J. P. [1 ,2 ]
机构
[1] Univ Alberta, Dept Phys, Edmonton, AB T6G 2E9, Canada
[2] Canadian Inst Adv Res, Nanoelect Program, Toronto, ON M5G 1Z8, Canada
基金
加拿大创新基金会; 加拿大自然科学与工程研究理事会;
关键词
SURFACE STRESS; KINETICS;
D O I
10.1063/1.4748977
中图分类号
O59 [应用物理学];
学科分类号
摘要
Low-mass, high-Q, silicon nitride nanostrings are at the cutting edge of nanomechanical devices for sensing applications. Here we show that the addition of a chemically functionalizable gold overlayer does not adversely affect the Q of the fundamental out-of-plane mode. Instead the device retains its mechanical responsiveness while gaining sensitivity to molecular bonding. Furthermore, differences in thermal expansion within the bilayer give rise to internal stresses that can be electrically controlled. In particular, an alternating current (AC) excites resonant motion of the nanostring. This AC thermoelastic actuation is simple, robust, and provides an integrated approach to sensor actuation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4748977]
引用
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页数:5
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