Quantum anti-dot formed with an airbridge gate in the quantum Hall regime

被引：3

作者：

Eguchi, Ryota ^{[1
]}

Kamata, Eiki ^{[1
]}

Lin, Chaojing ^{[1
]}

Aramaki, Hiromitsu ^{[1
]}

Fujisawa, Toshimasa ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys, Meguro Ku, 2-12-1 Ookayama, Tokyo 1528551, Japan

来源：

APPLIED PHYSICS EXPRESS | 2019年 / 12卷 / 06期

关键词：

AlGaAs/GaAs - Discrete levels - Fully depleted - Partially depleted - Quantum antidots - Quantum Hall regime - Shaped surfaces - Short periods;

D O I：

10.7567/1882-0786/ab2073

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a quantum antidot (QAD) formed with an airbridge gate on an AlGaAs/GaAs heterostructure, where a sub-micron pillar-shaped surface gate is biased via the bridge. We study transport through the QAD in the two regimes; one with a fully depleted region and the other with a partially depleted region at the center of the QAD. While standard Coulomb blockade (CB) oscillations with discrete levels are observed in the fully depleted region, short-period CB oscillations and more complicated patterns with multiple QADs are seen in the partially depleted region. The device is promising for investigating the few-particle regime. (C) 2019 The Japan Society of Applied Physics

引用

页数：4

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