The photoluminescence of ZnO thin films grown on Si (100) substrate by plasma-enhanced chemical vapor deposition

被引：46

作者：

Li, BS ^{[1
]}

Liu, YC ^{[1
]}

Zhi, ZZ ^{[1
]}

Shen, DZ ^{[1
]}

Lu, YM ^{[1
]}

Zhang, JY ^{[1
]}

Fan, XW ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Opt, Lab Excited State Proc, Changchun 130021, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 240卷 / 3-4期

基金：

中国国家自然科学基金;

关键词：

characterization; photoluminescence; X-ray diffraction; metalorganic vapor phase epitaxy; zinc compounds; semiconducting II-VI materials;

D O I：

10.1016/S0022-0248(02)00929-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

High-quality ZnO thin films have been grown on a Si(100) substrate by plasma-enhanced chemical vapor deposition (PECVD) using a zinc organic source (Zn(C2H5)(2)) and carbon dioxide (CO2) gas mixtures at a temperature of 180degreesC. A strong free exciton emission with a weak defect-band emission in the visible region is observed. The characteristics of photoluminescence (PL) of ZnO, as well as the exciton absorption peak in the absorption spectra, are closely related to the gas flow rate ratio of Zn(C2H5)(2) to CO2. Full-widths at half-maximum of the free exciton emission as narrow as 93.4 meV have been achieved. Based on the temperature dependence of the PL spectra from 83 to 383 K, the exciton binding energy and the transition energy of free excitons at 0 K were estimated to be 59.4 meV and 3.36 eV, respectively. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：479 / 483

页数：5

共 17 条

[1] High temperature excitonic stimulated emission from ZnO epitaxial layers [J].

Bagnall, DM ;

Chen, YF ;

Zhu, Z ;

Yao, T ;

Shen, MY ;

Goto, T .

APPLIED PHYSICS LETTERS, 1998, 73 (08) :1038-1040

[2] Growth of ZnO single crystal thin films on c-plane (0 0 0 1) sapphire by plasma enhanced molecular beam epitaxy [J].

Chen, YF ;

Bagnall, DM ;

Zhu, ZQ ;

Sekiuchi, T ;

Park, KT ;

Hiraga, K ;

Yao, T ;

Koyama, S ;

Shen, MY ;

Goto, T .

JOURNAL OF CRYSTAL GROWTH, 1997, 181 (1-2) :165-169

[3] Plasma-assisted molecular-beam epitaxy of ZnO epilayers on atomically flat MgAl2O4(111) substrates [J].

Chen, YF ;

Hong, SK ;

Ko, HJ ;

Nakajima, M ;

Yao, T ;

Segawa, Y .

APPLIED PHYSICS LETTERS, 2000, 76 (02) :245-247

[4] Stimulated emission and optical gain in ZnO epilayers grown by plasma-assisted molecular-beam epitaxy with buffers [J].

Chen, YF ;

Tuan, NT ;

Segawa, Y ;

Ko, H ;

Hong, S ;

Yao, T .

APPLIED PHYSICS LETTERS, 2001, 78 (11) :1469-1471

[5] OPTICAL-PROPERTIES OF AG-RELATED CENTERS IN BULK ZNSE [J].

HOLTZ, PO ;

MONEMAR, B ;

LOZYKOWSKI, HJ .

PHYSICAL REVIEW B, 1985, 32 (02) :986-996

[6] Room-temperature ultraviolet nanowire nanolasers [J].

Huang, MH ;

Mao, S ;

Feick, H ;

Yan, HQ ;

Wu, YY ;

Kind, H ;

Weber, E ;

Russo, R ;

Yang, PD .

SCIENCE, 2001, 292 (5523) :1897-1899

[7]

Huang MH, 2001, ADV MATER, V13, P113, DOI 10.1002/1521-4095(200101)13:2<113::AID-ADMA113>3.0.CO

[8]

2-H

[9] ZnO growth on Si by radical source MBE [J].

Iwata, K ;

Fons, P ;

Niki, S ;

Yamada, A ;

Matsubara, K ;

Nakahara, K ;

Tanabe, T ;

Takasu, H .

JOURNAL OF CRYSTAL GROWTH, 2000, 214 :50-54

[10] TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE FROM GAAS SINGLE AND MULTIPLE QUANTUM-WELL HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

JIANG, DS ;

JUNG, H ;

PLOOG, K .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (03) :1371-1377

← 1 2 →