Observation of suppressed interface state relaxation under positive gate biasing of the ultrathin oxynitride gate p-MOSFET subjected to negative-bias temperature stressing

被引：16

作者：

Ang, D. S. ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 05期

关键词：

charge pumping current; hole trapping; negative-bias temperature instability (NBTI); nitrided oxide; oxynitride; SiON;

D O I：

10.1109/LED.2006.873878

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impact of a positive gate relaxation voltage on the recovery of an ultrathin oxynitride gate p-MOSFET subjected to negative-bias temperature stressing is investigated. Apart from reaffirming previous observations on the accelerated threshold voltage recovery due primarily to positive field-induced discharge of positive SiO2 bulk states, the results also unambiguously show that the relaxation of Si/SiO2 interface states (N-it) is suppressed. The observed suppression of N-it relaxation poses an important challenge to the existing viewpoint of increased N-it relaxation under positive gate biasing.

引用

页码：412 / 415

页数：4

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