High-voltage SOI lateral MOSFET with a dual vertical field plate

被引：4

作者：

Fan Jie ^{[1
]}

Zhang Bo ^{[1
]}

Luo Xiao-Rong ^{[1
]}

Li Zhao-Ji ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

来源：

CHINESE PHYSICS B | 2013年 / 22卷 / 11期

基金：

中国国家自然科学基金;

关键词：

breakdown voltage; specific on-resistance; vertical field plate; oxide trench; POWER MOSFET; TRENCH; TRANSISTOR;

D O I：

10.1088/1674-1056/22/11/118502

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A new silicon-on-insulator (SOI) power lateral MOSFET with a dual vertical field plate (VFP) in the oxide trench is proposed. The dual VFP modulates the distribution of the electric field in the drift region, which enhances the internal field of the drift region and increases the drift doping concentration of the drift region, resulting in remarkable improvements in breakdown voltage (BV) and specific on-resistance (R-on,R-sp). The mechanism of the VFP is analyzed and the characteristics of BV and R-on,R-sp are discussed. It is shown that the BV of the proposed device increases from 389 V of the conventional device to 589 V, and the R-on,R-sp decreases from 366 m Omega.cm(2) to 110 m Omega.cm(2).

引用

页数：6

共 50 条

[21] An ultralow on-resistance high-voltage SOI p-channel LDMOS [J].

Deng, Gaoqiang ;

Wei, Jie ;

Liu, Jianping ;

Luo, Xiaorong .

SUPERLATTICES AND MICROSTRUCTURES, 2016, 100 :1029-1041

[22] A Novel High-voltage Interconnection Structure with Dual Trenches for 500V SOI-LIGBT [J].

Zhang, Long ;

Zhu, Jing ;

Sun, Weifeng ;

Chen, Meng ;

Huang, Chao ;

Zhou, Feng ;

Gu, Yan ;

Zhang, Sen ;

Su, Wei .

2016 28TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2016, :439-442

[23] Symmetrical SOI MESFET with a dual cavity region (DCR-SOI MESFET) to promote high-voltage and radio-frequency performances [J].

Anvarifard, Mohammad K. .

SUPERLATTICES AND MICROSTRUCTURES, 2016, 98 :492-503

[24] Simple MOSFET based high-voltage nanosecond pulse circuit [J].

Chaney, A ;

Sundararajan, R .

IEEE TRANSACTIONS ON PLASMA SCIENCE, 2004, 32 (05) :1919-1924

[25] A novel deep gate power MOSFET in partial SOI technology for achieving high breakdown voltage and low lattice temperature [J].

Amir Gavoshani ;

Ali A. Orouji .

Journal of Computational Electronics, 2021, 20 :1513-1519

[26] A Two-Dimensional Model for the Field-Plate Design of High-Voltage Transistor [J].

Lee, Jian-Hsing ;

Liao, Chih-Cherng ;

Shih, Ching-Kuei ;

Nidhi, Karuna ;

Li, Ching-Ho ;

Chen, Chun-Chih ;

Kan, Kai-Chuan ;

Chen, Ke-Horng .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (10) :5698-5704

[27] Highly Heat-Dissipating and High-voltage SOI-LDMOS Power Device [J].

Yang, Xiaoming ;

Cai, Yu ;

Li, Tianqian .

ADVANCES IN POWER AND ELECTRICAL ENGINEERING, PTS 1 AND 2, 2013, 614-615 :1574-+

[28] Lateral Superjunction Reduced Surface Field Structure for the Optimization of Breakdown and Conduction Characteristics in a High-Voltage Lateral Double Diffused Metal Oxide Field Effect Transistor [J].

Lin, Ming-Jang ;

Lee, Tsung-Hwang ;

Chang, Fang-Long ;

Liaw, Chorng-Wei ;

Cheng, Huang-Chung .

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2003, 42 (12) :7227-7231

[29] Lateral superjunction reduced surface field structure for the optimization of breakdown and conduction characteristics, in a high-voltage lateral double diffused metal oxide field effect transistor [J].

Lin, MJ ;

Lee, TH ;

Chang, FL ;

Liaw, CW ;

Cheng, HC .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (12) :7227-7231

[30] An area efficient body contact for low and high voltage SOI MOSFET devices [J].

Daghighi, Arash ;

Osman, Mohamed ;

Imam, Mohamed A. .

SOLID-STATE ELECTRONICS, 2008, 52 (02) :196-204

← 1 2 3 4 5 →