The properties of GaInP/GaAs heterostructures as a function of growth temperature

被引：1
作者：
Pelosi, C
Attolini, G
Bosi, M
Martín, E
Martinez, O
Sanz, LF
Jiménez, J
Prutskij, T
机构：
[1] CNR, IMEM, I-43010 Parma, Italy
[2] Escuela Tecn Super Ingn Ind, Dept Fis Mat Condensada, Valladolid 47011, Spain
[3] BUAP, Inst Ciencias, Puebla 72000, Mexico
来源：
JOURNAL DE PHYSIQUE IV | 2006年 / 132卷
关键词：
D O I：
10.1051/jp4:2006132060
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In order to find the best conditions under which ordering process is reduced InGaP layers were grown on GaAs substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) at low pressure in the temperature range between 525 and 600 degrees C. Because the metal organic cracking process was affected by temperature change the ratio between metal organic TriMethyl Gallium (TMG) and TriMethyl Indium (TMI) has to be tuned for every temperature, while maintaining the same reduced pressure of 60 mbar. The growth rate and the gaseous TMG/TMI ratio giving the match to GaAs are reported as a function of the growth temperature. Cathodoluminescence (CL) and mu-Raman analysis were used to understand the contributions of composition fluctuations, strain, Cu-Pt type ordering on the properties of the layers.
引用
收藏
页码：315 / 319
页数：5
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