Carrier transport mechanism of low resistance Ti/Al/Au ohmic contacts to AlInN/GaN heterostructures

被引：15

作者：

Kim, Seongjun ^{[1
]}

Ryou, Jae-Hyun ^{[2
,3
,4
,5
]}

Dupuis, Russell D. ^{[2
,3
]}

Kim, Hyunsoo ^{[1
]}

机构：

[1] Chonbuk Natl Univ, Sch Semicond & Chem Engn, Semicond Phys Res Ctr, Jeonju 561756, Chonbuk, South Korea

[2] Georgia Inst Technol, Ctr Compound Semicond, Atlanta, GA 30332 USA

[3] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[4] Univ Houston, Univ Houston TcSUH, Dept Mech Engn, Houston, TX 77204 USA

[5] Univ Houston, Univ Houston TcSUH, Texas Ctr Superconduct, Houston, TX 77204 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 05期

关键词：

TEMPERATURE; MOBILITY;

D O I：

10.1063/1.4790384

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The carrier transport mechanism of a low resistance Ti/Al/Au Ohmic contact to AlInN/GaN heterostructures was investigated. The Ohmic contact produced upon thermal annealing was due to the generation of TiN contact inclusions with a density of 2.8 x 10(8) cm(-2), i.e., spike mechanism. The sheet resistance of channel layer was found to follow power law, yielding the power index of -1.57. Temperature dependent contact resistance could be understood based on the parallel network model consisting of distributed resistance components of TiN contact inclusion (predominant) and the rest sound region (negligible), giving the barrier height of 0.65 eV and the carrier density of 2.3 x 10(19) cm(-3) at the TiN/GaN interfaces. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4790384]

引用

页数：4