Hardness of compositionally nano-modulated TiN films

被引：12

作者：

Kusano, E ^{[1
]}

Kitagawa, M ^{[1
]}

Satoh, A ^{[1
]}

Kobayashi, T ^{[1
]}

Nanto, H ^{[1
]}

Kinbara, A ^{[1
]}

机构：

[1] Kanazawa Inst Technol, AMS R&D Ctr, Matto, Ishikawa, Japan

来源：

NANOSTRUCTURED MATERIALS | 1999年 / 12卷 / 5-8期

关键词：

D O I：

10.1016/S0965-9773(99)00240-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Compositionally nano-modulated films have been deposited by a reactive gas flow rate modulation sputtering using a Ti target and N-2 gas. The explored modulation periods ranged from 6.7nm to 80nm. The thickness of the modulated layer was 400nm. A TiO2/Ti underlayer with a thickness of 100nm was deposited for the entire sample films. By the X-ray diffraction measurements, it was found that films consisted of polycrystalline Ti and TiN mixtures for the periods longer than 10nm and of monolithic TiN for the periods of 6.7nm and 8nm. The X-ray photoelectron spectroscopy results for the film with a modulation period of 80nm showed that the N concentration in metallic layers was about 30% and that of the nitrided layers was about 45%. The maximum hardness of 11.2GPa was obtained at a modulation period of 10nm for an indenter load of 2.94mN by nanoindentation. This value is larger than that obtained for a monolithic TiN film (8.4GPa). (C)1999 Acta Metallurgica Inc.

引用

页码：807 / 810

页数：4

共 5 条

[1] REACTIVE UNBALANCED MAGNETRON SPUTTER DEPOSITION OF POLYCRYSTALLINE TIN/NBN SUPERLATTICE COATINGS [J].