Electrical Characteristics and Impedance spectra of Gd2O3-doped Bi4Ti3O12 Ceramics

被引：3

作者：

Liu, X. B. ^{[1
]}

Mei, X. A. ^{[1
]}

Huang, C. Q. ^{[1
]}

Liu, J. ^{[1
]}

机构：

[1] Hunan Inst Sci & Technol, Sch Phys & Elect, Yueyang 414000, Peoples R China

来源：

CHINESE CERAMICS COMMUNICATIONS III | 2013年 / 624卷

关键词：

Microstructure; Impedance; Electrical properties; bismuth titanate; LARGE REMANENT POLARIZATION; BISMUTH TITANATE; FILMS;

D O I：

10.4028/www.scientific.net/AMR.624.182

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The electrical properties of Gd2O3-bismuth titanate (Bi4-xGdxTi3O12) prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of Gd-doped sample exhibits a simple ohmic behavior. The impedance spectrum of Gd-doped sample indicates that consist of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12 and the distribution of every element is uniform. Gd-doped sample exhibit randomly oriented and plate-like morphology.

引用

页码：182 / 185

页数：4

共 10 条

[1] The improvement in ferroelectric performance of (Bi3.15Nd0.85)4Ti3O12 films by the addition of hydrogen peroxide in a spin-coating solution [J].

Chang, Yi-Chun ;

Kuo, Dong-Hau .

THIN SOLID FILMS, 2006, 515 (04) :1683-1687

[2]

Chen M, 2004, CHINESE PHYS LETT, V21, P1811, DOI 10.1088/0256-307X/21/9/038

[3] Fatigue-free samarium-modified bismuth titanate (Bi4-xSmxTi3O12) film capacitors having large spontaneous polarizations [J].

Chon, U ;

Kim, KB ;

Jang, HM ;

Yi, GC .

APPLIED PHYSICS LETTERS, 2001, 79 (19) :3137-3139

[4] Large remanent polarization of (Bi,Nd)4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition [J].

Kojima, T ;

Sakai, T ;

Watanabe, T ;

Funakubo, H ;

Saito, K ;

Osada, M .

APPLIED PHYSICS LETTERS, 2002, 80 (15) :2746-2748

[5] Ferroelectric Bi3.25La0.75Ti3O12 films of uniform a-axis orientation on silicon substrates [J].

Lee, HN ;

Hesse, D ;

Zakharov, N ;

Gösele, U .

SCIENCE, 2002, 296 (5575) :2006-2009

[6] Large remanent polarization of vanadium-doped Bi4Ti3O12 [J].

Noguchi, Y ;

Miyayama, M .

APPLIED PHYSICS LETTERS, 2001, 78 (13) :1903-1905

[7] Lanthanum-substituted bismuth titanate for use in non-volatile memories [J].

Park, BH ;

Kang, BS ;

Bu, SD ;

Noh, TW ;

Lee, J ;

Jo, W .

NATURE, 1999, 401 (6754) :682-684

[8] FERROELECTRIC MEMORIES [J].

SCOTT, JF ;

DEARAUJO, CAP .

SCIENCE, 1989, 246 (4936) :1400-1405

[9] Approach for enhanced polarization of polycrystalline bismuth titanate films by Nd3+/V5+ cosubstitution [J].

Uchida, H ;

Yoshikawa, H ;

Okada, I ;

Matsuda, H ;

Iijima, T ;

Watanabe, T ;

Kojima, T ;

Funakubo, H .

APPLIED PHYSICS LETTERS, 2002, 81 (12) :2229-2231

[10] Effect of cosubstitution of La and V in Bi4Ti3O12 thin films on the low-temperature deposition [J].

Watanabe, T ;

Funakubo, H ;

Osada, M ;

Noguchi, Y ;

Miyayama, M .

APPLIED PHYSICS LETTERS, 2002, 80 (01) :100-102

← 1 →