Band gap modulation of ZnCdO alloy thin films with different Cd contents grown by pulsed laser deposition

被引：57
作者：
Jiang, Jie [1 ]
Zhu, Liping [1 ]
Li, Yang [1 ]
Guo, Yanmin [1 ]
Zhou, Weishun [1 ]
Cao, Ling [1 ]
He, Haiping [1 ]
Ye, Zhizhen [1 ]
机构：
[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2013年 / 547卷
基金：
中国国家自然科学基金; 国家教育部博士点专项基金资助;
关键词：
ZnCdO thin film; Band gap engineering; Photoluminescence; Pulsed laser deposition; OPTICAL-PROPERTIES; ZNO; PHOTOLUMINESCENCE; TEMPERATURE; MGXZN1-XO; EPITAXY; PLD;
D O I：
10.1016/j.jallcom.2012.08.070
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
ZnCdO thin films with different Cd contents have been deposited on quartz substrate by pulsed laser deposition. All the obtained films have a hexagonal wurtzite ZnO structure with a highly c-axis orientation without any Cd related phases from the XRD patterns. The band gap energy of ZnCdO films extending to 2.88 eV can be achieved by incorporating 9.6% Cd content. The bound excitons emission at 2.925 eV in the ZnCdO thin film can be found in the low temperature photoluminescence measurement. (c) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：59 / 62
页数：4
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