High volume synthesis of silicon nanopowder by electron beam ablation of silicon ingot at atmospheric pressure

被引：6

作者：

Bardakhanov, Sergey P. ^{[1
]}

Volodin, Vladimir A. ^{[2
]}

Efremov, Mikhail D. ^{[2
]}

Cherepkov, Vladislav V. ^{[3
]}

Fadeev, Sergey N. ^{[3
]}

Korchagin, Alexey I. ^{[3
]}

Marin, Denis V. ^{[2
]}

Golkovskiy, Mikhail G. ^{[3
]}

Tanashev, Yuriv Yu. ^{[4
]}

Lysenko, Vladimir I. ^{[1
]}

Nomoev, Andrey V. ^{[5
]}

Buyantuev, Molon D. ^{[5
]}

Sangaa, Deleg ^{[6
]}

机构：

[1] Russian Acad Sci, Siberian Branch, Khristianovich Inst Theoret & Appl Mech, Novosibirsk 630090, Russia

[2] Russian Acad Sci, Siberian Branch, Inst Semicond Phys, Novosibirsk 630090, Russia

[3] Russian Acad Sci, Siberian Branch, Budker Inst Nucl Phys, Novosibirsk 630090, Russia

[4] Russian Acad Sci, Siberian Branch, Boreskov Inst Catalysis, Novosibirsk 630090, Russia

[5] Buryatian State Univ, Ulan Ude 670000, Russia

[6] Mongolian Acad Sci, Inst Phys & Technol, Ulaanbaatar 210651, Mongolia

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 09期

关键词：

nanoparticles; silicon; electron accelerator; evaporation; nanoelectronics;

D O I：

10.1143/JJAP.47.7019

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The evaporation of high purity silicon ingot was performed in Ar. N-2. and air atmospheres using a power electron accelerator. The obtained powders with primary particle sizes of 10-500nm were investigated usim, Brunauer-Emmett-Teller analysis (BET). X-ray diffraction (XRD), scanning electron microscopy (SEM). transmission electron microscopy (TEN). photoluminescence measurement, and Raman spectroscopy. The structure and photoluminescence properties of Si(Ar) nanopowder obtained at a large quenching rate differ substantially from those of Si(Ar) and Si(N-2) obtained at a smaller quenching rate. Photoluminescence peaks in the visible region of the spectrum are detected at room temperature for the Si(Ar) nanopowders.

引用

页码：7019 / 7022

页数：4

共 16 条

[1] Nanopowders obtained by evaporating initial substances in an electron accelerator at atmospheric pressure [J].

Bardakhanov, S. P. ;

Korchagin, A. I. ;

Kuksanov, N. K. ;

Lavrukhin, A. V. ;

Salimov, R. A. ;

Fadeev, S. N. ;

Cherepkov, V. V. .

DOKLADY PHYSICS, 2006, 51 (07) :353-356

[2] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[3]

COLVIN VL, 1994, NATURE, V370, P354, DOI 10.1038/370354a0

[4] Technological applications of BINP industrial electron accelerators with focused beam extracted into atmosphere [J].

Fadeev, SN ;

Golkovski, MG ;

Korchagin, AI ;

Kuksanov, NK ;

Lavruhin, AV ;

Petrov, SE ;

Salimov, RA ;

Vaisman, AF .

RADIATION PHYSICS AND CHEMISTRY, 2000, 57 (3-6) :653-655

[5] Silicon nanocrystals with ensemble quantum yields exceeding 60% [J].

Jurbergs, David ;

Rogojina, Elena ;

Mangolini, Lorenzo ;

Kortshagen, Uwe .

APPLIED PHYSICS LETTERS, 2006, 88 (23)

[6] Visible and near-infrared luminescence from silicon nanostructures formed by ion implantation and pulse annealing [J].

Kachurin, GA ;

Tyschenko, IE ;

Zhuravlev, KS ;

Pazdnikov, NA ;

Volodin, VA ;

Gutakovsky, AK ;

Leier, AF ;

Skorupa, W ;

Yankov, RA .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 122 (03) :571-574

[7] Production of silver nano-powders by electron beam evaporation [J].

Korchagin, AI ;

Kuksanov, NK ;

Lavrukhin, AV ;

Fadeev, SN ;

Salimov, RA ;

Bardakhanov, SP ;

Goncharov, VB ;

Suknev, AP ;

Paukshtis, EA ;

Larina, TV ;

Zaikovskii, VI ;

Bogdanov, SV ;

Bal'zhinimaev, BS .

VACUUM, 2005, 77 (04) :485-491

[8]

LUKASHOV VP, 1996, Patent No. 2067077

[9] Improved one-phonon confinement model for an accurate size determination of silicon nanocrystals [J].

Paillard, V ;

Puech, P ;

Laguna, MA ;

Carles, R ;

Kohn, B ;

Huisken, F .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (04) :1921-1924

[10] Band gap engineering of amorphous silicon quantum dots for light-emitting diodes [J].

Park, NM ;

Kim, TS ;

Park, SJ .

APPLIED PHYSICS LETTERS, 2001, 78 (17) :2575-2577

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