Investigations on non volatile and non rotational phase change random access memory

被引：0

作者：

Shi, LP ^{[1
]}

Chong, TC ^{[1
]}

Zhao, R ^{[1
]}

Li, JM ^{[1
]}

Tan, PK ^{[1
]}

Miao, XS ^{[1
]}

Wang, WJ ^{[1
]}

Lee, HK ^{[1
]}

Wei, XQ ^{[1
]}

Yang, HX ^{[1
]}

Lim, KG ^{[1
]}

Song, WD ^{[1
]}

机构：

[1] Data Storage Inst, Singapore 117608, Singapore

来源：

2005 NON-VOLATILE MEMORY TECHNOLOGY SYMPOSIUM, PROCEEDINGS | 2005年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this work, Phase Change Random Access Memory (PCRAM) was studied theoretically and experimentally. Phase change materials were deposited and their physical parameters were measured. A simulation and design software for PCRAM was developed based on multidisciplinary theories including electrodynamics, thermal conduction, crystallization kinetics and numerical computations. By introducing physical models of PCRAM elements, a general macromodel of the phase change random access memory (PCRAM) elements for HSPICE-based computer simulator is proposed. PCRAM array were designed, fabricated, and tested by using a self built tester. Also, near field optical scan microscope incorporated with fs laser was used to fabricate nano scale PCRAM cells.

引用

页码：115 / 120

页数：6

共 8 条

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