Robust topological surface states in Sb2Te3 layers as seen from the weak antilocalization effect

被引：76

作者：

Takagaki, Y. ^{[1
]}

Giussani, A. ^{[1
]}

Perumal, K. ^{[1
]}

Calarco, R. ^{[1
]}

Friedland, K. -J. ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

PHYSICAL REVIEW B | 2012年 / 86卷 / 12期

关键词：

ELECTRON-ELECTRON INTERACTION; THIN SB FILMS; LOCALIZATION; INSULATORS; BI2TE3; TIME;

D O I：

10.1103/PhysRevB.86.125137

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Weak antilocalization and electron-electron interaction effects are investigated in Sb2Te3 layers. We accomplish smooth top and bottom surfaces for the layer using molecular-beam epitaxy, as revealed by the Kiessig oscillations in the x-ray reflectivity. The two helical surface states of the layer are found to contribute identically to the weak antilocalization effect. They are left intact in spite of low mobility and high concentration of unintentionally doped holes. The magnitude of the electron-electron interaction effect is consistent with the indication that both of the surface states survive in the layer. The robustness of the surface states demonstrates superiority of Sb2Te3 over Bi2Se3 and Bi2Te3. We also show that the phase-change property of Sb2Te3 provides controllability to switch the existence of the surface states.

引用

页数：7

共 45 条

[1] EFFECTS OF ELECTRON-ELECTRON COLLISIONS WITH SMALL ENERGY TRANSFERS ON QUANTUM LOCALIZATION [J].

ALTSHULER, BL ;

ARONOV, AG ;

KHMELNITSKY, DE .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (36) :7367-7386

[2] Reactive Chemical Doping of the Bi2Se3 Topological Insulator [J].

Benia, Hadj M. ;

Lin, Chengtian ;

Kern, Klaus ;

Ast, Christian R. .

PHYSICAL REVIEW LETTERS, 2011, 107 (17)

[3] WEAK LOCALIZATION IN THIN-FILMS - A TIME-OF-FLIGHT EXPERIMENT WITH CONDUCTION ELECTRONS [J].

BERGMANN, G .

PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 1984, 107 (01) :1-58

[4] LOCALIZATION AND ELECTRON-ELECTRON INTERACTION EFFECTS IN THIN BI WIRES AND FILMS [J].

BEUTLER, DE ;

GIORDANO, N .

PHYSICAL REVIEW B, 1988, 38 (01) :8-19

[5]

Birkholz M, 2006, THIN FILM ANALYSIS BY X-RAY SCATTERING, P1

[6]

BUTENKO AV, 1983, SOV J LOW TEMP PHYS, V9, P52

[7] Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological Insulator Bi2Se3 [J].

Checkelsky, J. G. ;

Hor, Y. S. ;

Cava, R. J. ;

Ong, N. P. .

PHYSICAL REVIEW LETTERS, 2011, 106 (19)

[8] Tunable surface conductivity in Bi2Se3 revealed in diffusive electron transport [J].

Chen, J. ;

He, X. Y. ;

Wu, K. H. ;

Ji, Z. Q. ;

Lu, L. ;

Shi, J. R. ;

Smet, J. H. ;

Li, Y. Q. .

PHYSICAL REVIEW B, 2011, 83 (24)

[9] Gate-Voltage Control of Chemical Potential and Weak Antilocalization in Bi2Se3 [J].

Chen, J. ;

Qin, H. J. ;

Yang, F. ;

Liu, J. ;

Guan, T. ;

Qu, F. M. ;

Zhang, G. H. ;

Shi, J. R. ;

Xie, X. C. ;

Yang, C. L. ;

Wu, K. H. ;

Li, Y. Q. ;

Lu, L. .

PHYSICAL REVIEW LETTERS, 2010, 105 (17)

[10] Study of the transition from the ideal Si(111)-H(1 x 1) surface to the (7 x 7) reconstruction by HREELS, UPS and LEED [J].

De Renzi, V ;

Biagi, R ;

del Pennino, U .

SURFACE SCIENCE, 2002, 497 (1-3) :247-253

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