Analysis of the experimental data for impurity-band conduction in Mn-doped InSb

被引：8

作者：

Kajikawa, Yasutomo ^{[1
]}

机构：

[1] Shimane Univ, Interdisciplinary Fac Sci & Engn, Dept Elect & Control Syst Engn, Matsue, Shimane 6908504, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 14 NO 1-2 | 2017年 / 14卷 / 1-2期

关键词：

impurity band; hopping conduction; Hall effect; InSb; HALL-MOBILITY; TRANSPORT; SEMICONDUCTORS; TRANSITION; SIGN;

D O I：

10.1002/pssc.201600215

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The experimental data of the temperature-dependent Hall-effect measurements on Mn-doped p -type InSb samples, which exhibit the anomalous sign reversal of the Hall coefficient to negative at low temperatures, have been analyzed on the basis of the nearest-neighbor hopping model in an impurity band. It is shown that the anomalous sign reversal of the Hall coefficient to negative can be well explained with assuming the hopping Hall factor in the form of Ahop = (kBT /J3) exp (KNNHT3/T) with the negative sign of J3. ((c) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

引用

页数：5

共 29 条

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