Current status of SiC power switching devices: Diodes & GTOs

被引：4

作者：

Seshadri, S ^{[1
]}

Agarwal, AK ^{[1
]}

Hall, WB ^{[1
]}

Mani, SS ^{[1
]}

MacMillan, MF ^{[1
]}

Rodrigues, R ^{[1
]}

Hanson, T ^{[1
]}

Khatri, S ^{[1
]}

Sanger, PA ^{[1
]}

机构：

[1] Northrop Grumman Corp, STC, ESSS, Pittsburgh, PA 15235 USA

来源：

WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999 | 1999年 / 572卷

关键词：

D O I：

10.1557/PROC-572-23

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The progress that has been made in SE diodes and GTOs is reviewed. A 100 A/1000 V SiC p-i-n diode package, the highest current rating reported for any SiC device, a 69 A conduction/11 A turn-off of a SE GTO and MTO(TM), as well as the first ah-SE, 3 phase Pulse Width Modulated (PWM) inverter are reported, herein, for the first time. The inverter achieves voltage controlled turn off with a high temperature capable, hybrid SE JFET. Material and process technology issues that will need to be addressed before device commercialization can be realized are discussed.

引用

页码：23 / 32

页数：10

共 14 条

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