Chemical durability engineering of solution-processed oxide thin films and its application in chemically-robust patterned oxide thin-film transistors

被引:24
作者
Cho, Sung Woon [1 ]
Kim, Da Eun [1 ]
Kang, Won Jun [1 ]
Kim, Bora [1 ]
Yoon, Dea Ho [1 ]
Kim, Kyung Su [1 ]
Cho, Hyung Koun [1 ]
Kim, Yong-Hoon [1 ]
Kim, Yunseok [1 ]
机构
[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, 300 Cheoncheon Dong, Suwon 16419, Gyeonggi Do, South Korea
基金
新加坡国家研究基金会;
关键词
TEMPERATURE FABRICATION; DOPED ZNO; TRANSPARENT; SEMICONDUCTOR; PERFORMANCE; ZINC; DIAGRAMS; MOBILITY;
D O I
10.1039/c6tc04094b
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
For the fabrication of solution-processed oxide thin-film transistors (TFTs), most studies have focused on the sol-gel coating of oxide films with high mobility, but the inevitable wet-based channel or metal patterning processes to integrate the circuits (individual TFTs + metal-lines) on large-area TFT back-planes have been excluded due to unintentional electrical degradation of conventional In and Zn based oxide channels and additional post-processes (etch-stopper and recovery process). The incorporation of Sn-O bonds in oxide films can enhance their electrical performance and chemical durability and minimize electrical degradation during wet-based metal patterning, but conversely, it makes wet-based channel patterning difficult. Using Sn-O incorporation and temperature-controlled thermal annealing, based on the chemical reaction route, we were able to engineer the chemical durability of sol-gel coated Sn-incorporated ZnO (ZTO) films into inferior (with weak M-O bonds) and robust states (with strong M-O bonds). Well-patterned solution-processed ZTO channels were formed in a chemically weak state and reinforced into a chemically robust state for metal patterning via the combination (soft-bake-pattern-hard bake) of chemical durability engineering and a wet-etching process, which induced uniformly patterned, highly electrical, chemically robust ZTO channels with a low leakage current (similar to 10(11) A), superior electrical performance (2.0 <= mu(FF) <= 3.2 cm(2) V-1 s(-1)), and chemical robustness against metal wet etchants. All wet-based approaches are designed to integrate the circuits (individual TFTs + metal-lines) on largearea solution-processed oxide TFT back-planes: (i) sol-gel channel coating, (ii) channel wet patterning, and (iii) electrode wet patterning in solution systems.
引用
收藏
页码:339 / 349
页数:11
相关论文
共 49 条
[1]   A review on the recent developments of solution processes for oxide thin film transistors [J].
Ahn, Byung Du ;
Jeon, Hye-Ji ;
Sheng, Jiazhen ;
Park, Jozeph ;
Park, Jin-Seong .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 30 (06)
[2]   An investigation into the growth conditions and defect states of laminar ZnO nanostructures [J].
Bendall, J. S. ;
Visimberga, G. ;
Szachowicz, M. ;
Plank, N. O. V. ;
Romanov, S. ;
Sotomayor-Torres, C. M. ;
Welland, M. E. .
JOURNAL OF MATERIALS CHEMISTRY, 2008, 18 (43) :5259-5266
[3]   Revised Pourbaix diagrams for zinc at 25-300 degrees C [J].
Beverskog, B ;
Puigdomenech, I .
CORROSION SCIENCE, 1997, 39 (01) :107-114
[4]   Aqueous Combustion Synthesis of Aluminum Oxide Thin Films and Application as Gate Dielectric in GZTO Solution-Based TFTs [J].
Branquinho, Rita ;
Salgueiro, Daniela ;
Santos, Lidia ;
Barquinha, Pedro ;
Pereira, Luis ;
Martins, Rodrigo ;
Fortunato, Elvira .
ACS APPLIED MATERIALS & INTERFACES, 2014, 6 (22) :19592-19599
[5]   A combinatorial approach to solution-processed InGaO3(ZnO)m superlattice films: growth mechanisms and their thermoelectric properties [J].
Cho, Sung Woon ;
Jeong, Myoungho ;
Kim, Jun Hyeon ;
Kwon, Yong Hun ;
Kim, Hyoungsub ;
Lee, Jeong Yong ;
Cho, Hyung Koun .
CRYSTENGCOMM, 2016, 18 (05) :807-815
[6]   Bi-layer Channel Structure-Based Oxide Thin-Film Transistors Consisting of ZnO and Al-Doped ZnO with Different Al Compositions and Stacking Sequences [J].
Cho, Sung Woon ;
Yun, Myeong Gu ;
Ahn, Cheol Hyoun ;
Kim, So Hee ;
Cho, Hyung Koun .
ELECTRONIC MATERIALS LETTERS, 2015, 11 (02) :198-205
[7]   Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances [J].
Fortunato, E. ;
Barquinha, P. ;
Martins, R. .
ADVANCED MATERIALS, 2012, 24 (22) :2945-2986
[8]   Fully transparent ZnO thin-film transistor produced at room temperature [J].
Fortunato, EMC ;
Barquinha, PMC ;
Pimentel, ACMBG ;
Gonçalves, AMF ;
Marques, AJS ;
Pereira, LMN ;
Martins, RFP .
ADVANCED MATERIALS, 2005, 17 (05) :590-+
[9]   EXPERIMENTAL PH POTENTIAL DIAGRAM OF ALUMINUM FOR SEA-WATER [J].
GIMENEZ, P ;
RAMEAU, JJ ;
REBOUL, MC .
CORROSION, 1981, 37 (12) :673-682
[10]   High Performance Metal Oxide Field-Effect Transistors with a Reverse Offset Printed Cu Source/Drain Electrode [J].
Han, Young Hun ;
Won, Ju-Yeon ;
Yoo, Hyun-Seok ;
Kim, Jae-Hyun ;
Choi, Rino ;
Jeong, Jae Kyeong .
ACS APPLIED MATERIALS & INTERFACES, 2016, 8 (02) :1156-1163