a-Si:H TFT-LCD with single organic passivation layer

被引：1

作者：

Kim, Young-il ^{[1
]}

Choi, Jae-Beom ^{[1
]}

Jin, Seong-Hyun ^{[1
]}

Choi, Yoon-Seok ^{[1
]}

Kim, Jong-An ^{[1
]}

Seo, Hyun-Sik ^{[1
]}

Lee, Jae-Hyung ^{[1
]}

Jung, Bae-Hyeun ^{[1
]}

Kang, Ho-Min ^{[1
]}

Kim, Dae-Kwang ^{[1
]}

Min, Hoon-Kee ^{[1
]}

Kim, Chi-Woo ^{[1
]}

机构：

[1] Samsung Elect, LCD Business, Youngin City, Gyeonggi Do, South Korea

来源：

2007 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXVIII, BOOKS I AND II | 2007年 / 38卷

关键词：

D O I：

10.1889/1.2785263

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A novel photosensitive organic material is used as the single organic passivation layer-for the conventional back channel etched thin film transistors. We find that the leakage current of the a-Si:H TFTs with single organic passivation layer is lower that that of the conventional transistors with Silicon nitride passivation layers and the adhesion strength between the organic layers and the pixel electrode is sufficiently strong so that the overlap between the ITO pixel electrode and the data lines can be formed. Using the novel materials, 1.9 '' qCIF AMLCD with single organic passivation layer was successfully fabricated with reduced process steps.

引用

页码：199 / 201

页数：3