Diffusion of Interstitial Mn in the Dilute Magnetic Semiconductor (Ga,Mn)As: The Effect of a Charge State

被引：13

作者：

Baykov, V. I. ^{[1
]}

Korzhavyi, P. A. ^{[1
]}

Johansson, B. ^{[1
]}

机构：

[1] Royal Inst Technol KTH, Appl Mat Phys, Dept Mat Sci & Engn, SE-10044 Stockholm, Sweden

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 101卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.101.177204

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Migration barriers for diffusion of interstitial Mn in the dilute magnetic semiconductor (Ga,Mn)As are studied using first-principles calculations. The diffusion pathway goes through two types of interstitial sites: As coordinated and Ga coordinated. The energy profile along the path is found to depend on the ratio of concentrations between substitutional and interstitial Mn in GaAs. Two regions of distinctly different behavior, corresponding to n-type and p-type (Ga,Mn)As, are identified. The difference in mobility is a reflection of the change in the charge state of Mn interstitials (double donors) that occurs in the presence of substitutional Mn impurities (acceptors). In addition, substitutional Mn impurities are shown to act as traps for interstitial Mn. The effective migration barrier for the positively doubly charged Mn interstitials in p-type (Ga,Mn)As is estimated to vary from 0.55 to about 0.95 eV.

引用

页数：4

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