Composition and Structure of Ga1-x Na x As Nanolayers Produced near the GaAs Surface by Na+ Implantation

被引：5

作者：

Boltaev, Kh. Kh. ^{[1
]}

Sodikjanov, Zh. Sh. ^{[1
]}

Tashmukhamedova, D. A. ^{[1
]}

Umirzakov, B. E. ^{[1
]}

机构：

[1] Tashkent State Tech Univ, Univ Skaya Ul 2, Tashkent 100095, Uzbekistan

来源：

TECHNICAL PHYSICS | 2017年 / 62卷 / 12期

关键词：

ION-IMPLANTATION;

D O I：

10.1134/S1063784217120040

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The composition and structure of nanodimensional Ga1 - x Na (x) As phases produced by implantation of Na+ ions into the near-surface area of GaAs have been studied by Auger electron spectroscopy and fast electron diffraction. It has been found that the thickness of the ternary epitaxial layer is 10-12 nm for ion energy E (0) = 20 keV. The composition of the three-layer nanosystems is GaAs-Ga0.5Na0.5As-GaAs.

引用

页码：1882 / 1884

页数：3

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