AlGaN metal-semiconductor-metal photodiodes

被引：138

作者：

Monroy, E ^{[1
]}

Calle, F

Muñoz, E

Omnès, F

机构：

[1] Univ Politecn Madrid, ETSI Telecommun, Dept Ingn Elect, E-28040 Madrid, Spain

[2] CNRS, CRHEA, F-06560 Valbonne, France

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 22期

关键词：

D O I：

10.1063/1.123358

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the fabrication and characterization of AlGaN metal-semiconductor-metal photodiodes with sharp cutoff wavelengths from 365 to 310 nm. The detectors are visible blind, with an ultraviolet/visible contrast of about 4 orders of magnitude. The photocurrent scales linearly with optical power for photon energies both over and below the band gap, supporting the absence of photoconductive gain related to space-charge regions. No persistent photoconductivity effects have been detected. Time response is limited by the RC product of the measurement system, the transit time of the device being far below 10 ns. The normalized noise equivalent power at 28 V bias is lower than 17 pW/Hz(1/2) in GaN detectors, and about 24 pW/Hz(1/2) in Al0.25Ga0.75N photodiodes. (C) 1999 American Institute of Physics. [S0003-6951(99)03522-6].

引用

页码：3401 / 3403

页数：3

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