Low Power 3T-2R Non-Volatile TCAM Cell with Dual Match-line

被引：0
|
作者：
Cheon, Dojong [1 ,2 ]
Kwon, Kee-Won [1 ]
机构：
[1] Sungkyunkwan Univ, Coll Informat & Commun Engn, Suwon, Gyeonggi Do, South Korea
[2] Samsung Elect Co LTD, Memory Div, Suwon, Gyeonggi Do, South Korea
来源：
2019 INTERNATIONAL CONFERENCE ON ELECTRONICS, INFORMATION, AND COMMUNICATION (ICEIC) | 2019年
基金：
新加坡国家研究基金会;
关键词：
3T-2R nvTCAM; TCAM; low power; dual match-line;
D O I：
10.23919/elinfocom.2019.8706337
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this paper, we propose a non-volatile ternary content addressable memory cell architecture with dual match-line, that is suitable for high speed search and low power consumption in 3T-2R cell structure. The proposed 3T-2R nvTCAM cell can reduce the comparison delay time between the stored data and the retrieval data by 18.6% and confirm that there is no power consumption by adding the match-line, when simulated in 64-bit row array using 180nm CMOS technology.
引用
收藏
页码：70 / 71
页数：2
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