Ultrahigh-performance planar β-Ga2O3 solar-blind Schottky photodiode detectors

The low dark current, high responsivity and high specific detectivity could be preferably achieved in detectors based on junctions, owing to the efficient constraint of carriers. Compared with the other junctions, planar Schottky junctions have simple structures and technological demands and are easy integrated. Herein, in this work, we prepared the beta-Ga2O3 thin film by metal-organic chemical vapor deposition method to construct planar Ti/beta-Ga2O3/Ni Schottky photodiode detectors with different on-state resistances. Fortunately, all the devices exhibit state-of-the-art performances, such as responsivity of 175-1372 A W-1, specific detectivity of 10(14) Jones and external quantum efficiency of 85700%-671500%. In addition, the dependences of device performances on the on-state resistances indicate that the higher dark currents, photocurrents and photoresponsivities may well be obtained when on-state resistance is smaller, due to the less external power is used to overcome the impendence and condensance at the Ti/beta-Ga2O3 and Ni/beta-Ga2O3 interfaces, but contributing to higher electric current flow both in the dark and under illuminations.