Experimental study of the orientation dependence of indium incorporation in GaInN

被引：25

作者：

Bhat, Rajaram ^{[1
]}

Guryanov, Giorgiy M. ^{[1
]}

机构：

[1] Corning Inc, Corning, NY 14831 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2016年 / 433卷

关键词：

Metal organic chemical vapor deposition; Metal organic vapor phase epitaxy; Organometallic vapor phase epitaxy; Nitrides; Semiconducting III-V materials; INGAN/GAN LASER-DIODES; LIGHT-EMITTING-DIODES; QUANTUM-WELLS; FIELDS; LAYERS;

D O I：

10.1016/j.jcrysgro.2015.09.022

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Indium incorporation was studied on a wide variety of planes tilted from the c-plane towards either the a-plane or the m-plane, as well as on two additional planes that were tilted with respect to the a- and mplanes but normal to the c-plane. It was found that the indium content and the photoluminescence wavelength variation patterns are similar. The growth rates do not vary significantly with orientation except for (10-13) and (10-1-3). Indium incorporation was found to increase with reactor pressure except for (10-1-2) and (20-2-7). The change in indium incorporation efficiency with growth temperature is found to depend on the orientation. (C) 2015 Elsevier B.V. All rights reserved.

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页码：7 / 12

页数：6

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