Impact of self-heating effect on long-term reliability and performance degradation in CMOS circuits

被引：130

作者：

Semenov, O ^{[1
]}

Vassighi, A

Sachdev, M

机构：

[1] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada

[2] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2006年 / 6卷 / 01期

关键词：

CMOS technology scaling; long-term reliability; performance degradation; self-heating effect;

D O I：

10.1109/TDMR.2006.870340

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As the technology feature size is reduced, the thermal management of high-performance very large scale integrations (VLSIs) becomes an important design issue. The self-heating effect and nonuniform power distribution in VLSIs lead to performance and long-term reliability degradation. In this paper, we analyze the self-heating effect in high-performance sub-0.18-mu m bulk and silicon-on-insulator (SOI) CMOS circuits using fast transient quasi-de thermal simulations. The impact of the self-heating effect and technology scaling on the metallization lifetime and the gate oxide time-to-breakdown (TBD) reduction are also investigated. Based on simulation results, an optimized clock-driver design is proposed. The proposed layout reduces the hot-spot temperature by 15 degrees C and by 7 degrees C in 0.09-mu m SOI and bulk CMOS technologies, respectively.

引用

页码：17 / 27

页数：11

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