Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers

被引：77

作者：

Johnson, JW ^{[1
]}

Zhang, AP

Luo, WB

Ren, F

Pearton, SJ

Park, SS

Park, YJ

Chyi, JI

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[3] Samsung Adv Inst Technol, Suwon 440600, South Korea

[4] Natl Cent Univ, Dept Chem Engn, Chungli 32054, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 01期

基金：

美国国家科学基金会;

关键词：

edge termination; GaN; power electronics; rectifiers; reverse recovery;

D O I：

10.1109/16.974745

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Schottky rectifiers with implanted p(+) guard ring edge termination fabricated on free-standing GaN substrates show reverse breakdown voltages up to 160 V in vertical geometry devices. The specific on-state resistance was in the range 1.7-30 Omega(.)cm(2), while the turn-on voltage was similar to1.8 V. The switching performance was analyzed using the reverse recovery current transient waveform, producing an approximate high-injection, level hole lifetime of similar to15 ns. The bulk GaN rectifiers show significant improvement in forward current density and on-state resistance over previous heteroepitaxial devices.

引用

页码：32 / 36

页数：5

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