Near infrared organic photodetector utilizing a double electron blocking layer

被引：17

作者：

Shafian, Shafidah ^{[1
]}

Hwang, Heewon ^{[1
]}

Kim, Kyungkon ^{[1
]}

机构：

[1] Ewha Womans Univ, Dept Chem & Nano Sci, Seoul 120750, South Korea

来源：

OPTICS EXPRESS | 2016年 / 24卷 / 22期

基金：

新加坡国家研究基金会;

关键词：

POLYMER PHOTODETECTORS; HIGH-DETECTIVITY; EFFICIENCY;

D O I：

10.1364/OE.24.025308

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A near infrared organic photodiode (OPD) utilizing a double electron blocking layer (EBL) fabricated by the sequential deposition of molybdenum (VI) oxide (MoO3) and poly(3,4ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) is reported. The double EBL improves the on/off current ratio of OPD up to 1.36 x 10(4) at -1V, which is one order of magnitude higher than PEDOT: PSS single EBL (2.45 x 10(3)) and three orders of magnitude higher than that of MoO3 single EBL (7.86). The detectivity at near infrared (800 nm) at -1V is 4.90 x 10(11) Jones, which is 2.83 times higher than the PEDOT:PSS single EBL and 2 magnitudes higher compared to the MoO3 single EBL. (C) 2016 Optical Society of America

引用

页码：25308 / 25316

页数：9

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