Nonlinear absorption in indium arsenide

被引：10

作者：

Berryman, KW ^{[1
]}

Rella, CW ^{[1
]}

机构：

[1] STANFORD UNIV, WW HANSEN LABS PHYS, STANFORD PICOSECOND FEL CTR, STANFORD, CA 94305 USA

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.55.7148

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using a free-electron laser source, we have studied the nonlinear absorption in indium arsenide at three representative wavelengths: 4.55, 5.06, and 6.30 mu m. By measuring the temperature dependence of the two-photon-absorption (TPA) coefficient we have been able to discriminate between parabolic and nonparabolic band models of the TPA process. Using an extension of these methods we were also able to measure the free-carrier absorption induced by TPA and to demonstrate the importance of other higher-order absorption processes.

引用

页码：7148 / 7154

页数：7

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