Static and dynamic spin-torque-diode sensitivity induced by the thermoelectric charge and spin currents in magnetic tunnel junctions

被引：0

作者：

Demin, Gleb D. ^{[1
,2
]}

Popkov, Anatoly F. ^{[1
,2
]}

机构：

[1] State Univ, Moscow Inst Phys & Technol, Dolgoprudnyi 141701, Russia

[2] Natl Res Univ Elect Technol MIET, Moscow 124498, Russia

来源：

INTERNATIONAL CONFERENCE ON MICRO- AND NANO-ELECTRONICS 2018 | 2019年 / 11022卷

基金：

俄罗斯科学基金会;

关键词：

Magnetic tunnel junction; spin-torque diode; sensitivity; tunnel magneto-Seebeck effect; microwave detector; microwave power; inhomogeneous thermal heating;

D O I：

10.1117/12.2522526

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Based on the quantum-mechanical transport calculations of the charge and spin fluxes associated with the inhomogeneous thermal heating of three-dimensional structure of MTJ by the input RF microwave power, finite-element analysis of the thermal contribution to the spin-torque sensitivity of MTJ was carried out in the case of zero bias current. Within the magnon-induced spin-transfer torque model, the amplification of DC rectifying voltage in the spin-torque diode initiated by the spin pumping to the tunnel barrier from magnons was also estimated. The results obtained can be used for the development of new types of microwave detectors based on spin thermoelectric effects in MTJ.

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页数：11

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