Resistive switching in microscale anodic titanium dioxide based memristors

被引：41

作者：

Aglieri, V. ^{[1
]}

Zaffora, A. ^{[1
]}

Lullo, G. ^{[1
]}

Santamaria, M. ^{[3
]}

Di Franco, F. ^{[3
]}

Lo Cicero, U. ^{[2
]}

Mosca, M. ^{[1
]}

Macaluso, R. ^{[1
]}

机构：

[1] Univ Palermo, Dipartimento Energia Ingn Informaz & Modelli Mate, TFL, Viale Sci Ed 9, I-90128 Palermo, Italy

[2] Ist Nazl Astrofis INAF, Osservatorio Astronom Palermo, Via Ingrassia 31, I-90123 Palermo, Italy

[3] Univ Palermo, Dipartimento Ingn Civile, Electrochem Mat Sci Lab, Ambientale,Aerosp,Mat DICAM, Viale Sci Ed 6, I-90128 Palermo, Italy

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2018年 / 113卷

关键词：

Memristor; RRAM; Resistive switching; Asymmetric hysteresis; Anodizing; TiO2; ATOMIC-FORCE MICROSCOPY; PHYSICOCHEMICAL CHARACTERIZATION; TIO2; FILMS; OXIDE; THICKNESS; MEMORY; RRAM;

D O I：

10.1016/j.spmi.2017.10.031

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The potentiality of anodic TiO2 as an oxide material for the realization of resistive switching memory cells has been explored in this paper. Cuianodic-TiO2/Ti memristors of different sizes, ranging from 1 x 1 mu m(2) to 10 x 10 mu m(2) have been fabricated and characterized. The oxide films were grown by anodizing Ti films, using three different process conditions. Measured IV curves have shown similar asymmetric bipolar hysteresis behaviors in all the tested devices, with a gradual switching from the high resistance state to the low resistance state and vice versa, and a R-OFF/R-ON ratio of 80 for the thickest oxide film devices. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：135 / 142

页数：8

共 39 条

[1] Influence of Ti top electrode thickness on the resistive switching properties of forming free and self-rectified TiO2 - x thin films [J].