Quantum spin Hall effect in monolayer and bilayer TaIrTe4

被引:42
|
作者
Guo, Peng-Jie [1 ,2 ]
Lu, Xiao-Qin [1 ,2 ]
Ji, Wei [1 ,2 ]
Liu, Kai [1 ,2 ]
Lu, Zhong-Yi [1 ,2 ]
机构
[1] Renmin Univ China, Dept Phys, Beijing 100872, Peoples R China
[2] Renmin Univ China, Beijing Key Lab Optoelect Funct Mat & Micronano D, Beijing 100872, Peoples R China
基金
中国国家自然科学基金;
关键词
METAL; TRANSITION;
D O I
10.1103/PhysRevB.102.041109
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Generally, stacking two quantum spin Hall insulators gives rise to a trivial insulator. Here, based on first-principles electronic structure calculations, we confirm that monolayer TaIrTe4 is a quantum spin Hall insulator and remarkably find that bilayer TaIrTe4 is still a quantum spin Hall insulator. Theoretical analysis indicates that the covalentlike interlayer interaction in combination with the small band gap at the time-reversal invariant Gamma point results in new band inversion in bilayer TaIrTe4, namely, the emergence of quantum spin Hall phase. Meanwhile, a topological phase transition can be observed by increasing the interlayer distance in bilayer TaIrTe4. Considering that bulk TaIrTe4 is a type-II Weyl semimetal, layered TaIrTe4 thus provides an ideal platform to realize different topological phases at different dimensions.
引用
收藏
页数:6
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