Jefferson Lab IR demo FEL photocathode quantum efficiency scanner

被引：3

作者：

Gubeli, J ^{[1
]}

Evans, R ^{[1
]}

Grippo, A ^{[1
]}

Jordan, K ^{[1
]}

Shinn, M ^{[1
]}

Siggins, T ^{[1
]}

机构：

[1] Thomas Jefferson Natl Accelerator Facil, Newport News, VA 23606 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2001年 / 475卷 / 1-3期

关键词：

GaAs photocathode; quantum efficiency; raster/scanner;

D O I：

10.1016/S0168-9002(01)01695-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Jefferson Laboratory's Free Electron Laser (FEL) incorporates a cesiated gallium arsenide (GaAs) DC photocathode gun as its electron source. By using a set of scanning mirrors, the surface of the GaAs wafer is illuminated with a 543.5nm helium-neon laser. Measuring the current flow across the biased photocathode generates a quantum efficiency (QE) map of the 1-in. diameter wafer surface. The resulting QE map provides a very detailed picture of the efficiency of the wafer surface. By generating a QE map in a matter of minutes, the photocathode scanner has proven to be an exceptional tool in quickly determining sensitivity and availability of the photocathode for operation. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：554 / 558

页数：5