Changes of Fermi surface topology due to the rhombohedral distortion in SnTe

被引：8

作者：

O'Neill, Christopher D. ^{[1
,2
]}

Clark, Oliver J. ^{[3
]}

Keen, Harry D. J. ^{[1
,2
]}

Mazzola, Federico ^{[3
]}

Markovic, Igor ^{[3
,4
]}

Sokolov, Dmitry A. ^{[4
]}

Malekos, Andreas ^{[1
,2
]}

King, Phil D. C. ^{[3
]}

Hermann, Andreas ^{[1
,2
]}

Huxley, Andrew D. ^{[1
,2
]}

机构：

[1] Univ Edinburgh, Ctr Sci Extreme Condit, Edinburgh EH9 3JZ, Midlothian, Scotland

[2] Univ Edinburgh, SUPA, Sch Phys & Astron, Edinburgh EH9 3JZ, Midlothian, Scotland

[3] Univ St Andrews, Sch Phys & Astron, St Andrews KY16 9SS, Fife, Scotland

[4] Max Planck Inst Chem Phys Solids, Nothnitzer Str 40, D-01187 Dresden, Germany

来源：

PHYSICAL REVIEW B | 2020年 / 102卷 / 15期

基金：

英国工程与自然科学研究理事会; 英国自然环境研究理事会;

关键词：

PHASE-TRANSITION; BAND-STRUCTURE; MAGNETORESISTANCE;

D O I：

10.1103/PhysRevB.102.155132

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Stoichiometric SnTe is theoretically a small gap semiconductor that undergoes a ferroelectric distortion on cooling. In reality however, crystals are always nonstoichiometric and metallic; the ferroelectric transition is therefore, more accurately described as a polar structural transition. Here, we study the Fermi surface using quantum oscillations as a function of pressure. We find the oscillation spectrum changes at high pressure due to the suppression of the polar transition and less than 10 kbars is sufficient to stabilize the undistorted cubic lattice, this is accompanied by a large decrease in the Hall and electrical resistivities. Combined with our density functional theory calculations and angle-resolved photoemission spectroscopy measurements, this suggests the Fermi surface L pockets have lower mobility than the tubular Fermi surfaces that connect them. Additionally, we find the unusual phenomenon of a linear magnetoresistance that exists irrespective of the distortion that we attribute to regions of the Fermi surface with high curvature.

引用

页数：8

共 27 条

[21]

Pippard AB., 1989, MAGNETORESISTANCE ME

[22] Engineering relativistic effects in ferroelectric SnTe [J].

Plekhanov, E. ;

Barone, P. ;

Di Sante, D. ;

Picozzi, S. .

PHYSICAL REVIEW B, 2014, 90 (16)

[23] FERMI-SURFACE STUDIES IN SNTE [J].

SAVAGE, HT ;

BURKE, JR ;

HOUSTON, B .

PHYSICAL REVIEW B, 1972, 6 (06) :2292-&

[24]

Tanaka Y, 2012, NAT PHYS, V8, P800, DOI [10.1038/nphys2442, 10.1038/NPHYS2442]

[25] RELATIVISTIC BAND STRUCTURE AND ELECTRONIC PROPERTIES OF SNTE GETE AND PBTE [J].

TUNG, YW ;

COHEN, ML .

PHYSICAL REVIEW, 1969, 180 (03) :823-&

[26] Room Temperature Giant and Linear Magnetoresistance in Topological Insulator Bi2Te3 Nanosheets [J].

Wang, Xiaolin ;

Du, Yi ;

Dou, Shixue ;

Zhang, Chao .

PHYSICAL REVIEW LETTERS, 2012, 108 (26)

[27] Giant Linear Magnetoresistance and Carrier Density Tunable Transport in Topological Crystalline Insulator SnTe Thin Film [J].

Wei, Feng ;

Gao, Xuan P. A. ;

Ma, Song ;

Zhang, Zhidong .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2019, 256 (10)

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