Ultra-wideband low noise amplifier using a cascode feedback topology

被引:0
作者
Jung, J [1 ]
Chung, K
Yun, T
Choi, J
Kim, H
机构
[1] Hanyang Univ, Div Elect & Comp Engn, 17 Haengdang Dong, Seoul 133791, South Korea
[2] Samsung Adv Inst Technol, Suwon 440600, South Korea
来源
2006 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2006年
关键词
broadband; cascode; CMOS; low noise amplifier; shunt feedback; ultra-wideband (UWB);
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An ultra-wideband (UWB) low noise amplifier (LNA) that consists of two cascode and shunt feedback stages is presented. Measurement results show the maximum power gain (S-21) of 11.9 dB with the 3-dB band from 2 to 6.5 GHz and input/output reflection coefficient (S-11, S-22) of less than -7.8 dB from 2 to 11 GHz. In addition, the fabricated LNA achieves the average noise figure (NF) of 4.5 dB from 2 to 10 GHz, which value is much lower than previously reported state-of-the-art UWB amplifiers. The input-referred third-order intercept point (IIP3) and the input-referred 1-dB compression point (P-1dB) of the LNA are achieved as 4 dBm and -5 dBm, respectively, while consuming 27 mW in 0.18 mu m RF CMOS process.
引用
收藏
页码:202 / +
页数:2
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