Analysis of Enhanced Photocarrier Radiometry Signals for Ion-Implanted and Annealed Silicon Wafers

被引：1

作者：

Liu, Xianming ^{[1
,2
]}

Li, Bincheng ^{[2
]}

Huang, Qiuping ^{[2
]}

机构：

[1] Chongqing Univ, Key Lab Optoelect Technol & Syst, Educ Minist China, Chongqing 400044, Peoples R China

[2] Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Sichuan, Peoples R China

来源：

INTERNATIONAL JOURNAL OF THERMOPHYSICS | 2012年 / 33卷 / 10-11期

关键词：

Ion implantation; Photocarrier radiometry; Quantum efficiency; Thermal annealing; ROOM-TEMPERATURE; LUMINESCENCE; DIODES; DEFECT;

D O I：

10.1007/s10765-012-1283-0

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

It is experimentally observed that the photocarrier radiometry (PCR) signals of silicon wafers are greatly enhanced by ion implantation and thermal annealing. A two-layer theoretical model is employed to analyze the experimental observation in detail. Theoretical simulations indicate that the increased optical-to-electronic quantum efficiency of the implanted layer could be the main photoluminescence mechanism contributing to the PCR signal enhancement. The decreased surface recombination velocity induced by surface electric field and the change of electronic transport properties of the implanted layer also contribute to the signal enhancement.

引用

页码：2089 / 2094

页数：6

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