Influence of In-Gap States on the Formation of Two-Dimensional Election Gas at ABO3/SrTiO3 Interfaces

被引：7

作者：

Li, Cheng-Jian ^{[1
]}

Xue, Hong-Xia ^{[1
]}

Qu, Guo-Liang ^{[1
]}

Shen, Sheng-Chun ^{[1
]}

Hong, Yan-Peng ^{[1
]}

Wang, Xin-Xin ^{[1
]}

Liu, Ming-rui ^{[1
]}

Jiang, Wei-min ^{[1
]}

Badica, Petre ^{[2
]}

He, Lin ^{[1
]}

Dou, Rui-Fen ^{[1
]}

Xiong, Chang-Min ^{[1
]}

Lu, Wei-ming ^{[3
]}

Nie, Jia-Cai ^{[1
]}

机构：

[1] Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China

[2] Natl Inst Mat Phys, Atomistilor 405A, Magurele 077125, Ilfov, Romania

[3] Harbin Inst Technol, Condensed Matter Sci & Technol Inst, Harbin 150001, Heilongjiang, Peoples R China

来源：

SCIENTIFIC REPORTS | 2018年 / 8卷

基金：

中国国家自然科学基金;

关键词：

DIELECTRIC-PROPERTIES; ELECTRON GASES; OXIDE; SUPERCONDUCTIVITY; COEXISTENCE; SRTIO3;

D O I：

10.1038/s41598-017-18583-5

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

We explored in-gap states (IGSs) in perovskite oxide heterojunction films. We report that IGSs in these films play a crucial role in determining the formation and properties of interfacial two-dimensional electron gas (2DEG). We report that electron trapping by IGSs opposes charge transfer from the film to the interface. The IGS in films yielded insulating interfaces with polar discontinuity and explained low interface carrier density of conducting interfaces. An ion trapping model was proposed to explain the physics of the IGSs and some experimental findings, such as the unexpected formation of 2DEG at the initially insulating LaCrO3/SrTiO3 interface and the influence of substitution layers on 2DEG.

引用

页数：11

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