Double-skeleton based shape-stabilized phase change materials with excellent solar-thermal energy conversion and shape memory performance

被引：11
作者：
Liu, Zhipeng [1 ]
He, Fangfang [1 ]
Yang, Aoshuang [1 ,2 ]
Su, Li [1 ]
Li, Yongsheng [1 ]
Jiang, Shubin [3 ]
Chen, Zhengguo [4 ]
Yang, Wenbin [1 ]
机构：
[1] Southwest Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Environm friendly Energy Mat, Sichuan 621010, Peoples R China
[2] Sichuan Coll Architectural Technol, Sichuan 618000, Peoples R China
[3] China Acad Engn Phys, Inst Nucl Phys & Chem, Sichuan 621000, Peoples R China
[4] Mianyang Cent Hosp, NHC Key Lab Nucl Technol Med Transformat, Sichuan 621019, Peoples R China
来源：
THERMOCHIMICA ACTA | 2022年 / 717卷
关键词：
Double-skeleton; Graphene aerogel; Phase change materials; Shape memory performance; Solar-thermal conversion; ENCAPSULATION TECHNIQUES; GRAPHENE OXIDE; COMPOSITE; STORAGE; CONDUCTIVITY; PARAFFIN;
D O I：
10.1016/j.tca.2022.179360
中图分类号：
O414.1 [热力学];
学科分类号：
摘要：
Polyethylene glycol (PEG) is widely used for thermal energy storage, but its practical application is limited by its strong rigidity, poor shape stability. In this work, a kind of melamine foam/graphene aerogel (MF/GA) double -skeleton was prepared, then PEG was stably encapsulated into MF/GA by vacuum melt impregnation method to obtain MF/GA@PEG shape-stabilized phase change materials (SSPCMs). Structural characterization and per-formance tests were performed on MF/GA@PEG SSPCMs, including morphological observation, latent heat, thermal conductivity, shape stability, and photothermal conversion capability. The experimental results show that the MF/GA@PEG SSPCMs show high energy storage density (168.3 J/g), good shape stability, shape memory performance and excellent solar-thermal energy conversion capability with a high efficiency of 84.8%, the thermal conductivity of MF/GA@PEG SSPCMs is 161% higher than that of pure PEG. The MF/GA@PEG SSPCMs with comprehensive properties have promising application in solar-thermal energy storage and thermal management in microelectronic devices.
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页数：10
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