Dielectric Layers for RF-MEMS Switches: Design and Study of Appropriate Structures Preventing Electrostatic Charging

被引：22

作者：

Makasheva, K. ^{[1
]}

Despax, B.

Boudou, L.

Teyssedre, G.

机构：

[1] Univ Toulouse, UPS, INPT, LAPLACE Lab Plasma & Convers Energie, F-31062 Toulouse 9, France

来源：

IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION | 2012年 / 19卷 / 04期

关键词：

Dielectric film; Plasma materials-processing; applications; Microelectromechanical devices; FILMS; TEMPERATURE;

D O I：

10.1109/TDEI.2012.6259990

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work we present results from an experimental study on the physico-chemical and electrical properties of thin dielectric layers (SiOxNy) deposited using a plasma assisted process. An application of those dielectric layers in RF-MEMS switches is aimed at. We look for a better understanding of dielectric charging phenomenon as it is known to be the main cause for the failure and low reliability in the actuation of RF-MEMS switches. In order to improve the performance of dielectric layers used in RF-MEMS we have tested a new concept: instead of elaborating new materials we assembled a dielectric multi-layer structure that gains from design rather than from composition. To achieve this we have started with a characterization of the mono-layers deposited singly. The multi-layer structure was found to be a promising candidate for suitable modulation of the conductive properties of the deposited dielectric layers for their use in RF-MEMS switches.

引用

页码：1195 / 1202

页数：8

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