Dielectric Layers for RF-MEMS Switches: Design and Study of Appropriate Structures Preventing Electrostatic Charging

被引：22
|
作者：
Makasheva, K. [1 ]
Despax, B.
Boudou, L.
Teyssedre, G.
机构：
[1] Univ Toulouse, UPS, INPT, LAPLACE Lab Plasma & Convers Energie, F-31062 Toulouse 9, France
来源：
IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION | 2012年 / 19卷 / 04期
关键词：
Dielectric film; Plasma materials-processing; applications; Microelectromechanical devices; FILMS; TEMPERATURE;
D O I：
10.1109/TDEI.2012.6259990
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work we present results from an experimental study on the physico-chemical and electrical properties of thin dielectric layers (SiOxNy) deposited using a plasma assisted process. An application of those dielectric layers in RF-MEMS switches is aimed at. We look for a better understanding of dielectric charging phenomenon as it is known to be the main cause for the failure and low reliability in the actuation of RF-MEMS switches. In order to improve the performance of dielectric layers used in RF-MEMS we have tested a new concept: instead of elaborating new materials we assembled a dielectric multi-layer structure that gains from design rather than from composition. To achieve this we have started with a characterization of the mono-layers deposited singly. The multi-layer structure was found to be a promising candidate for suitable modulation of the conductive properties of the deposited dielectric layers for their use in RF-MEMS switches.
引用
收藏
页码：1195 / 1202
页数：8
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