Physical understanding of fundamental properties of Si(110) pMOSFETs - Inversion-layer capacitance, mobility universality, and uniaxial stress effects

被引：33

作者：

Saitoh, Masumi ^{[1
]}

Kobayashi, Shigeki ^{[1
]}

Uchida, Ken ^{[1
]}

机构：

[1] Toshiba Co Ltd, Corp R&D Ctr, Adv LSI Technol Lab, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

来源：

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/IEDM.2007.4419045

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Fundamental transport properties of Si (110) pMOSFETs are systematically investigated. Inversion-layer capacitance (inversion-layer thickness) of (110) pFETs is larger (smaller) than that of (100) pFETs owing to larger effective mass normal to the surface in (110) pFETs. Peculiar substrate impurity concentration (N-sub) dependence of low-field mobility (mu) : mu increase with N-sub increase in (110)/< 110 > pFETs, is observed for the first time. High mu even in high N-sub regime in (110) pFETs is caused by large subband energy splitting. Although uniaxial stress effects on mu is weaker in high-Nub (110) pFETs than in (100) pFETs, much higher mu without strain leads to excellent performance of strained (110)/< 110 > pFETs.

引用

页码：711 / 714

页数：4

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