Phonon Self-Energy Corrections to Nonzero Wave-Vector Phonon Modes in Single-Layer Graphene

被引:32
作者
Araujo, P. T. [1 ]
Mafra, D. L. [1 ,2 ]
Sato, K. [3 ]
Saito, R. [3 ]
Kong, J. [1 ]
Dresselhaus, M. S. [1 ,4 ]
机构
[1] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA
[2] Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil
[3] Tohoku Univ, Dept Phys, Sendai, Miyagi 9808578, Japan
[4] MIT, Dept Phys, Cambridge, MA 02139 USA
基金
美国国家科学基金会;
关键词
WALL CARBON NANOTUBES; RAMAN-SPECTROSCOPY; GRAPHITE;
D O I
10.1103/PhysRevLett.109.046801
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Phonon self-energy corrections have mostly been studied theoretically and experimentally for phonon modes with zone-center (q = 0) wave vectors. Here, gate-modulated Raman scattering is used to study phonons of a single layer of graphene originating from a double-resonant Raman process with q not equal 0. The observed phonon renormalization effects are different from what is observed for the zone-center q = 0 case. To explain our experimental findings, we explored the phonon self-energy for the phonons with nonzero wave vectors (q not equal 0) in single-layer graphene in which the frequencies and decay widths are expected to behave oppositely to the behavior observed in the corresponding zone-center q = 0 processes. Within this framework, we resolve the identification of the phonon modes contributing to the G(star) Raman feature at 2450 cm(-1) to include the iTO + LA combination modes with q not equal 0 and also the 2iTO overtone modes with q = 0, showing both to be associated with wave vectors near the high symmetry point K in the Brillouin zone.
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页数:5
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