Crystallization of Cu-doped thin Ge film assisted with a Cu-Ge droplet

被引：3
作者：
Hara, Akito [1 ]
Suzuki, Hitoshi [1 ]
Utsumi, Hiroki [1 ]
Miyazaki, Ryo [1 ]
Kitahara, Kuninori [2 ]
机构：
[1] Tohoku Gakuin Univ, Tagajo, Miyagi 9858537, Japan
[2] Shimane Univ, 1060 Nishikawatsu Cho, Matsue, Shimane 6908504, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2020年 / 59卷 / 08期
基金：
日本学术振兴会;
关键词：
Ge; Cu; TEM; droplet; HIGH-MOBILITY; AMORPHOUS-GE; TRANSISTORS; GERMANIUM;
D O I：
10.35848/1347-4065/aba6fd
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We observed the crystallization process of an amorphous germanium (a-Ge) thin film, including copper (Cu) nanoparticles in the intermediate position of the structures in terms of depth, by using in situ TEM. It was found that a nanoscale droplet was formed around the Cu nanoparticles at 500 degrees C, which is lower than the eutectic temperature of the bulk Cu-Ge system (640 degrees C); following which, the nanoscale droplets solidified at the same temperature. The existence of a nanoscale liquid phase at a temperature lower than the bulk eutectic temperature is consistent with the eutectic system with gold nanoparticles on the Ge film.
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页数：5
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